Laser diode
US7873092B2 · kind B2 · utility
1Cited by
9References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 31, 2007 |
| Grant date | Jan 18, 2011 |
| Priority date | — |
| Expiry date | Oct 31, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2301/02
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The present invention provides a laser diode realizing improved light detection precision. The laser diode includes a stack structure in which a first semiconductor layer of a first conduction type, an active layer, and a second semiconductor layer of a second conduction type are included in this order; a photodetection layer; and a plurality of light absorption layers provided on the corresponding position of antinodes or nodes of standing waves of light output from the active layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.