Monolithic IC and MEMS microfabrication process
US7875484B2 · kind B2 · utility
2Cited by
7References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 20, 2006 |
| Grant date | Jan 25, 2011 |
| Priority date | — |
| Expiry date | Jun 14, 2029 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB81C2203/0742
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
Monolithic IC/MEMS processes are disclosed in which high-stress silicon nitride is used as a mechanical material while amorphous silicon serves as a sacrificial layer. Electronic circuits and micro-electromechanical devices are built on separate areas of a single wafer. The sequence of IC and MEMS process steps is designed to prevent alteration of partially completed circuits and devices by subsequent high process temperatures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.