Manufacturing method of semiconductor apparatus and semiconductor apparatus, power converter using the same
US7875509B2 · kind B2 · utility
1Cited by
7References
8Claims
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Key dates
| Filing date | Apr 16, 2008 |
| Grant date | Jan 25, 2011 |
| Priority date | — |
| Expiry date | Sep 29, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/157
Abstract
In a manufacturing method of a SOI type high withstand voltage semiconductor device formed on a support substrate via an insulation film, a small-sized semiconductor device having small dispersion of withstand voltage is manufactured by introducing impurities into the whole surface of a p-type or n-type SOI substrate having an impurity concentration of 2E14 cm−3 or less and serving as an active layer of the semiconductor device with an ion implantation method and thereby forming a drift layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.