Memory device and semiconductor device
US7875881B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 25, 2008 |
| Grant date | Jan 25, 2011 |
| Priority date | — |
| Expiry date | May 21, 2028 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24942
Abstract
Objects are to solve inhibition of miniaturization of a memory element and complexity of a manufacturing process thereof and to provide a nonvolatile memory device and a semiconductor device each having the memory device, in which data can be additionally written except at the time of manufacture and in which forgery or the like caused by rewriting of data can be prevented, and a memory device and a semiconductor device that are inexpensive and nonvolatile. The present invention provides a semiconductor device that includes a plurality of memory elements, in each of which a first conductive layer, a second conductive layer disposed beside the first conductive layer, and a mixed film that are disposed over the same insulating film. The mixed film contains an inorganic compound, an organic compound, and a halogen atom and is disposed between the first conductive layer and the second conductive layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.