Integrated circuit comprising a photodiode of the floating substrate type and corresponding fabrication process

US7875915B2 · kind B2 · utility

Assignee

• STMicroelectronics SA

Inventors

• Francois Roy · Seyssinet-Pariset, FR
• Arnaud Tournier · Grenoble, FR

Key dates

• Filing date: May 10, 2006
• Grant date: Jan 25, 2011
• Expiry date: Aug 12, 2027

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F39/803

Abstract

An integrated circuit includes at least one photodiode associated with a read transistor. The photodiode is formed from a stack of three semiconductor layers comprising a buried layer, an floating substrate layer and an upper layer. The drain region and/or the source region of the transistor are incorporated within the upper layer. The buried layer is electrically isolated from the upper layer so as to allow the buried layer to be biased independently of the upper layer.