Semiconductor device and method for manufacturing the same
US7875935B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jun 4, 2007 |
| Grant date | Jan 25, 2011 |
| Priority date | — |
| Expiry date | Oct 26, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0174
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a silicon substrate; an N-channel field-effect transistor including a first gate insulating film on the silicon substrate, a first gate electrode on the first gate insulating film and a first source/drain region; and a P-channel field-effect transistor including a second gate insulating film on the silicon substrate, a second gate electrode on the second gate insulating film and a second source/drain region. Each of the first and second gate electrodes includes a crystallized nickel silicide region containing an impurity element, the crystallized nickel silicide region being contact with the first or second gate insulating film, and a barrier layer region in an upper portion including an upper surface of the gate electrode, the barrier layer region containing an Ni diffusion-preventing element higher in concentration than that of a lower portion below the upper portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.