Semiconductor photodetector that causes avalanche multiplication to occur only at photodetector portion located at central portion of mesa structure
US7875946B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Oct 27, 2005 |
| Grant date | Jan 25, 2011 |
| Priority date | — |
| Expiry date | Oct 27, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/413
Abstract
In order to improve reliability by preventing edge breakdown in a semiconductor photodetector having a mesa structure such as a mesa APD, the semiconductor photodetector includes a mesa structure formed on a first semiconductor layer of the first conduction type formed on a semiconductor substrate, the mesa structure including a light absorbing layer for absorbing light, an electric field buffer layer for dropping an electric field intensity, an avalanche multiplication layer for causing avalanche multiplication to occur, and a second semiconductor layer of the second conduction type, wherein the thickness of the avalanche multiplication layer at the portion in the vicinity of the side face of the mesa structure is made thinner than the thickness at the central portion of the mesa structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.