Semiconductor substrate of GaAs and semiconductor device

US7875961B2 · kind B2 · utility

Assignee

• OSRAM Opto Semiconductors GmbH · DE

Inventors

• Norbert Linder · Wenzenbach, DE
• Günther Grönninger · Dietenhofen, DE
• Peter Heidborn · Bad Kötzting, DE
• Klaus Streubel · Hemau, DE
• Siegmar Kugler · Regensburg, DE

Key dates

• Filing date: Nov 19, 2009
• Grant date: Jan 25, 2011
• Expiry date: Nov 19, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/824
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A semiconductor substrate, of GaAs with a semiconductor layer sequence applied on top of the substrate. The semiconductor layer sequence comprises a plurality of semiconductor layers of Al1-yGayAs1-xPx with 0≦x≦1 and 0≦y≦1. A number of the semiconductor layers respectively comprising a phosphorus component x which is greater than in a neighboring semiconductor layer lying thereunder in the direction of growth of the semiconductor layer sequence. Two semiconductor layers directly preceding the uppermost semiconductor layer of the semiconductor layer sequence have a smaller lattice constant than the uppermost layer.