Semiconductor device having improved heat sink
US7875971B2 · kind B2 · utility
5Cited by
2References
20Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Mar 3, 2008 |
| Grant date | Jan 25, 2011 |
| Priority date | — |
| Expiry date | Mar 7, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/1611
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The semiconductor device includes a substrate, a first semiconductor element, a second semiconductor element, a first heat sink and a second heat sink. The first and the second semiconductor elements are provided on the substrate. The maximum power consumption of the first semiconductor element is lower than that of the second semiconductor element. The first heat sink is fixed to the first semiconductor element. The second heat sink is fixed to the second semiconductor element. The first heat sink is spaced apart from the second heat sink.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.