Patent · US Active

Magneto-resistive effect device of the CPP type, and magnetic disk system

US7876534B2 · kind B2 · utility

19Cited by
12References
11Claims
0Family size

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Inventors

Key dates

Filing dateJan 15, 2008
Grant dateJan 25, 2011
Priority date
Expiry dateJun 18, 2029

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG11B2005/3996
  • WIPO fieldAudio-visual technology
  • WIPO sectorElectrical engineering

Abstract

A magnetoresistive device comprising a magnetoresistive unit, an upper shield layer and a lower shield layer stacked such that the magnetoresistive unit is held between them. The magnetoresistive unit comprises a nonmagnetic metal intermediate layer, a first ferromagnetic layer and a second ferromagnetic layer stacked with the nonmagnetic metal intermediate layer in the middle. When no bias magnetic field is applied, the first and second ferromagnetic layers have mutually antiparallel magnetizations. The magnetoresistive unit further comprises first and second side shield layers, and first and second biasing layers located to be magnetically coupled to the first and second side shield layers, wherein magnetic fluxes fed from the bias magnetic fields pass through the first and second side shield layers positioned in proximity to the magnetoresistive unit such that the magnetizations of the first and second ferromagnetic layers become substantially orthogonal to each other.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.