Adaptive electrostatic discharge (ESD) protection of device interface for local interconnect network (LIN) bus and the like
US7876540B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 17, 2008 |
| Grant date | Jan 25, 2011 |
| Priority date | — |
| Expiry date | Jun 9, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH02H9/046
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Adaptive electrostatic discharge (ESD) protection of a device interface has very good ESD robustness when it is handled or when installed into or removed from a system. And has robust immunity to DPI, electromagnetic interference (EMI) and the like, when it is operational in a system. There is a significant capacitive coupling between the drain and gate of a ESD protection metal oxide semiconductor (MOS) device to enhance ESD protection and lower snap back voltage thereof whenever there is no (or a low level) DPI on the external connection to be protected. Whereupon when a significant DPI/EMI signal is detected on the external connection, the capacitive coupling between the drain and gate of the MOS ESD protection device is disconnected, bypassed or attenuated so that DPI/EMI immunity of the device is enhanced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.