Patent · US Active

Apparatus and method for determining a memory state of a resistive n-level memory cell and memory device

US7876598B2 · kind B2 · utility

7Cited by

9References

24Claims

0Family size

Assignee

Qimonda AG · DE

Inventors

Peter Schroegmeier · Birkenfeld, DE
Stefan Dietrich · Potsdam, DE

Key dates

Filing date	Feb 28, 2008
Grant date	Jan 25, 2011
Priority date	—
Expiry date	May 8, 2029

Classification

Technology area (CPC G)Physics
CPC primaryG11C2211/5634
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

A determination of the memory state of a resistive n-level memory cell is described. The determination includes charging or discharging a read capacity of the memory cell by applying a voltage between a first electrode and a second electrode of the resistive memory cell. A voltage at the second electrode is compared to a reference voltage to obtain a comparison signal. The comparison signal is sampled at, at least, (n−1) time instants during the charge or discharge of the read capacity to obtain sampling values. The memory state of the memory cell can be determined based upon the sampling values.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.