Phase change memory, phase change memory assembly, phase change memory cell, 2D phase change memory cell array, 3D phase change memory cell array and electronic component

US7876605B2 · kind B2 · utility

Assignees

• Rheinisch-Westfälische Technische Hochschule (RWTH) Aachen · DE
• COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

• Peter Haring Bolivar · Wenden, DE
• Bernard Bechevet · Le Pont-de-Claix, FR
• Veronique Sousa · Grenoble, FR
• Dae Hwang Kim · Aachen, DE
• Heinrich Kurz · Aachen, DE
• Florian Merget · Aachen, DE

Key dates

• Filing date: Oct 19, 2004
• Grant date: Jan 25, 2011
• Expiry date: May 23, 2027

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/8828

Abstract

A phase change memory having a memory material layer consisting of a phase change material, and a first and second electrical contact which are located at a distance from one another and via which a switching zone of the memory material layer can be traversed by a current signal, wherein the current signal can be used to induce a reversible phase change between a crystalline phase and an amorphous phase and thus a change in resistance of the phase change material in the switching zone. The invention also relates to a phase change memory assembly, a phase change memory cell, a 2D phase change memory cell array, a 3D phase change memory cell array and an electronic component.