Patent · US Active

Method and solution to grow charge-transfer complex salts

US7879263B2 · kind B2 · utility

0Cited by

0References

6Claims

0Family size

Assignee

IMEC · BE

Inventors

Robert Muller · Monsheim, DE
Jan Genoe · Messelbroek, BE

Key dates

Filing date	Jul 24, 2007
Grant date	Feb 1, 2011
Priority date	—
Expiry date	Jan 9, 2028

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10T428/31504
WIPO fieldElectrical machinery, apparatus, energy
WIPO sectorElectrical engineering

Abstract

The present disclosure relates to methods and solutions for growing metal charge-transfer salts on a metal surface, such as a metal layer at the bottom of a via hole. The method makes use of a solution comprising a salt additive. The temperature during growth is in the range of −100° C. to +100° C. The method allows controlled growth of the metal charge transfer salt inside via hole while limiting growth outside the via hole. The method further limits corrosion of the metallic connections at the bottom of the via hole.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.