Substrate processing apparatus, method of manufacturing a semiconductor device, and method of forming a thin film on metal surface
US7879400B2 · kind B2 · utility
1Cited by
3References
14Claims
0Family size
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Key dates
| Filing date | Oct 10, 2007 |
| Grant date | Feb 1, 2011 |
| Priority date | — |
| Expiry date | Feb 16, 2029 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/265
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
There is provided a substrate processing apparatus equipped with a metallic component, with at least a part of its metallic surface exposed to an inside of a processing chamber and subjected to baking treatment at a pressure less than atmospheric pressure. As a result of this baking treatment, a film which does not react with various types of reactive gases, and which can block the out diffusion of metals, is formed on the surface of the above-mentioned metallic component.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.