Diamond thin film coating method and diamond-coated cemented carbide member
US7879412B2 · kind B2 · utility
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Key dates
| Filing date | Jun 10, 2005 |
| Grant date | Feb 1, 2011 |
| Priority date | — |
| Expiry date | Dec 18, 2027 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C30/005
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A diamond thin film coating method is provided that enables, with no need for an intermediate layer, the formation of a diamond thin film, which has conventionally been considered difficult because cobalt contained in a binding phase of a cemented carbide provides a catalysis for the formation of graphite.Cobalt in a binding phase (11) present in a surface of a cemented carbide substrate member comprised of a hard phase of a carbide (2) and a binding phase (1) containing cobalt, is silicidated into silicide (3), and thereafter the diamond thin film is formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.