Photomask, manufacturing method thereof, and electronic device manufacturing method
US7879512B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jan 23, 2008 |
| Grant date | Feb 1, 2011 |
| Priority date | — |
| Expiry date | Jun 1, 2028 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/36
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A photomask includes a transparent substrate and an opaque film formed on the transparent substrate. The opaque film is configured to form a device pattern with which a wafer is to be exposed; and at least one pair of assist patterns is formed by the opaque film, one assist pattern on each side of the device pattern on the transparent substrate. The size of each assist pattern of the pair of assist patterns is such that the assist pattern is not resolved on the wafer. A part of each assist pattern of the pair of assist patterns includes step portions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.