Patent · US Active

Photomask, manufacturing method thereof, and electronic device manufacturing method

US7879512B2 · kind B2 · utility

0Cited by
2References
10Claims
0Family size

Assignee

Inventor

Key dates

Filing dateJan 23, 2008
Grant dateFeb 1, 2011
Priority date
Expiry dateJun 1, 2028

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG03F1/36
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

A photomask includes a transparent substrate and an opaque film formed on the transparent substrate. The opaque film is configured to form a device pattern with which a wafer is to be exposed; and at least one pair of assist patterns is formed by the opaque film, one assist pattern on each side of the device pattern on the transparent substrate. The size of each assist pattern of the pair of assist patterns is such that the assist pattern is not resolved on the wafer. A part of each assist pattern of the pair of assist patterns includes step portions.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.