Method of fabricating semiconductor device
US7879680B2 · kind B2 · utility
1Cited by
1References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 25, 2008 |
| Grant date | Feb 1, 2011 |
| Priority date | — |
| Expiry date | Jan 30, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/692
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Photoresist on a metal is removed with less oxidation of the metal surface by the invented ashing. During process, the matching of oxygen gas ratio and wafer temperature under downstream plasma which means no RF bias plasma is controlled for oxidation amount not to depend on ashing time with required photo resist rate in manufacturing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.