Methods for making electronic devices with a solution deposited gate dielectric
US7879688B2 · kind B2 · utility
11Cited by
34References
18Claims
0Family size
Assignee
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Key dates
| Filing date | Jun 29, 2007 |
| Grant date | Feb 1, 2011 |
| Priority date | — |
| Expiry date | Sep 21, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K71/135
Abstract
A method of making an electronic device comprises solution depositing a dielectric composition onto a substrate and polymerizing the dielectric composition to form a gate dielectric. The dielectric composition comprises a polymerizable resin and zirconium oxide nanoparticles.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.