Crystallization apparatus and method of amorphous silicon
US7879700B2 · kind B2 · utility
1Cited by
19References
17Claims
0Family size
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Key dates
| Filing date | Feb 24, 2004 |
| Grant date | Feb 1, 2011 |
| Priority date | — |
| Expiry date | Jun 23, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/0229
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
A silicon crystallization system includes a beam generator generating a laser beam, first and second optical units for controlling the laser beam from the beam generator; and a stage for mounting a panel including an amorphous silicon layer to be polycrystallized by the laser beam from the optical units. The first optical unit makes the laser beam have a transverse edge and a longitudinal edge longer than the transverse edge, and the second optical unit makes the laser beam have a transverse edge and a longitudinal edge shorter than the transverse edge.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.