Semiconductor light-emitting device, illuminator and method of manufacturing semiconductor light-emitting device
US7880177B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 12, 2007 |
| Grant date | Feb 1, 2011 |
| Priority date | — |
| Expiry date | Aug 17, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/857
Abstract
A semiconductor light-emitting device having high reliability is obtained while suppressing separation between a support substrate and a semiconductor element layer. This semiconductor light-emitting device includes a support substrate (1), a first bonding layer (2a) formed on the support substrate (1), a second bonding layer (2b) formed on the first bonding layer (2a), a third bonding layer (2c) formed on the second bonding layer (2b), and a semiconductor element layer (3) formed on the third bonding layer (2c). The melting point of the second bonding layer (2b) is lower than the melting points of the first bonding layer (2a) and the third bonding layer (2c).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.