Composite semiconductor device and method of manufacturing the same
US7880180B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 11, 2007 |
| Grant date | Feb 1, 2011 |
| Priority date | — |
| Expiry date | Apr 14, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/856
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The disclosed subject matter provides a composite semiconductor device which can include a common substrate, a first semiconductor light emitting structure, and a second semiconductor light emitting structure. The first semiconductor light emitting structure can include an epitaxial grown layer containing a light emitting layer formed on part of the common substrate either directly or via a bonding layer. The second semiconductor light emitting structure can be provided in a notch at at least one location to which the epitaxial grown layer is not bonded, or in a recess formed in the notch at one location. The disclosed subject matter also provides a method of manufacturing a composite semiconductor device having the above-described and other structures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.