System and method for providing a high frequency response silicon photodetector

US7880204B2 · kind B2 · utility

Assignee

• Massachusetts Institute of Technology · US

Inventors

• Michael W. Geis · Acton, US
• Steven J. Spector · Lexington, US
• Donna M. Lennon · Bedford, US
• Matthew E. Grein · Cambridge, US
• Robert T. Schulein · Waltham, US
• Jung U. Yoon · Belmont, US
• Franz X. Kaertner · Newton, US
• Fuwan Gan · Shanghai, CN
• Theodore M. Lyszczarz · Concord, US

Key dates

• Filing date: Oct 2, 2006
• Grant date: Feb 1, 2011
• Expiry date: May 2, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F30/22

Abstract

A Silicon photodetector contains an insulating substrate having a top surface and a bottom surface. A Silicon layer is located on the top surface of the insulating substrate, where the Silicon layer contains a center region, the center region being larger in thickness than the rest of the Silicon layer. A top Silicon dioxide layer is located on a top surface of the center region. A left wing of the center region and a right wing of the center region are doped. The Silicon photodetector also has an active region located within the center region, where the active region contains a tailored crystal defect-impurity combination and Oxygen atoms.