Photo detector device

US7880207B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Matthias Fertig · Kvaisa, GE
• Thomas Morf · Gross, CH
• Jonas R. Weiss · Thalwil, CH
• Thomas Pflueger · Echterdingen, DE
• Nikolaj Moll · Zürich, CH

Key dates

• Filing date: Jan 9, 2009
• Grant date: Feb 1, 2011
• Expiry date: Apr 18, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F39/805

Abstract

A photo detector device comprising a first layer comprising a first material, and a second layer arranged adjacent to the first layer, the second layer comprising strained silicon, wherein the second layer further comprises a light absorption region located substantially within the strained silicon, wherein the first or the second layer is arranged on a substrate.