Method for producing a dielectric interlayer and storage capacitor with such a dielectric interlayer

US7880212B2 · kind B2 · utility

Assignee

• Qimonda AG · DE

Inventors

• Bernd Hintze · Rohrbach, DE
• Henry Bernhardt · Dresden, DE
• Frank Bernhardt · Eppelheim, DE

Key dates

• Filing date: Aug 25, 2008
• Grant date: Feb 1, 2011
• Expiry date: Jul 24, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D1/665

Abstract

A dielectric interlayer, especially for a storage capacitor, is formed from a layer sequence subjected to a temperature process, wherein the layer sequence has at least a first metal oxide layer and a second metal oxide layer formed by completely oxidizing a metal nitride layer to higher valency.