Integrated circuit device with a semiconductor body and method for the production of an integrated circuit device
US7880226B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 25, 2008 |
| Grant date | Feb 1, 2011 |
| Priority date | — |
| Expiry date | Feb 1, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/518
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An integrated circuit device with a semiconductor body and a method for the production of a semiconductor device a provided. The semiconductor body comprises a cell field with a drift zone of a first conduction type. In addition, the semiconductor device comprises an edge region surrounding the cell field. Field plates with a trench gate structure are arranged in the cell field, and an edge trench surrounding the cell field is provided in the edge region. The front side of the semiconductor body is in the edge region provided with an edge zone of a conduction type complementing the first conduction type with doping materials of body zones of the cell field. The edge zone of the complementary conduction type extends both within and outside the edge trench.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.