MIM capacitor

US7880268B2 · kind B2 · utility

Assignee

• STMicroelectronics SA

Inventors

• Sebastien Cremer · Hameau du Château, FR
• Cedric Perrot · Saint-Martin-d'Hères, FR
• Claire Richard · Crolles, FR

Key dates

• Filing date: May 9, 2007
• Grant date: Feb 1, 2011
• Expiry date: Oct 6, 2027

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B12/37

Abstract

A method for forming a MIM-type capacitor by filling of trenches by conformal depositions of insulating materials and of conductive materials, two successive electrodes of the capacitor including on either side of a thin vertical insulating layer at least one conductive layer of same nature, including the step of lowering the level of the conductive layers with respect to the level of the insulating layer separating them.