Quantum dot-dispersed light emitting device, and manufacturing method thereof
US7880377B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 20, 2005 |
| Grant date | Feb 1, 2011 |
| Priority date | — |
| Expiry date | Jun 14, 2026 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/256
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A light emitting device having practical light emission characteristics is obtained without epitaxial growth.A quantum dot-dispersed light emitting device of the invention includes a substrate 11, an electron injection electrode 12, a hole injection electrode 14, and an inorganic light emitting layer 13 disposed so as to be in contact with both the electrodes. The inorganic light emitting layer 13 contains an ambipolar inorganic semiconductor material and nanocrystals 15 dispersed as luminescent centers in the ambipolar inorganic semiconductor material and is configured so as to be capable of light emission without having, at the interface with the electron injection electrode and/or the hole injection electrode, epitaxial relation therewith.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.