Patent · US Active

Circuit providing load isolation and memory domain translation for memory module

US7881150B2 · kind B2 · utility

126Cited by
125References
36Claims
0Family size

Assignee

Inventors

Key dates

Filing dateDec 2, 2009
Grant dateFeb 1, 2011
Priority date
Expiry dateDec 2, 2029

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY02P70/50
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

A circuit is configured to be mounted on a memory module so as to be electrically coupled to a plurality of double-data-rate (DDR) memory devices arranged in one or more ranks on the memory module. The circuit includes a logic element, a register, and a phase-lock loop device. The circuit is configurable to respond to a set of input signals from a computer system to selectively isolate one or more loads of the plurality of DDR memory devices from the computer system and to translate between a system memory domain of the computer system and a physical memory domain of the plurality of DDR memory devices.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.