Process for producing a BST thin-film capacitor having increased capacity density and reduced leakage current density
US7883905B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 28, 2006 |
| Grant date | Feb 8, 2011 |
| Priority date | — |
| Expiry date | Jan 11, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02282
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
It is an object of the invention to provide a process for production of a thin-film capacitor that can simultaneously achieve improved capacity density and reduced leakage current density for barium strontium titanate thin-films. There is provided a process for production of thin-film capacitors that includes a metal oxide thin-film forming step in which an organic dielectric starting material is fired to form a barium strontium titanate thin-film, wherein the firing atmosphere used is an oxygen-containing inert gas atmosphere, and the barium strontium titanate thin-film formed by the process has a larger capacity density than the capacity density of the barium strontium titanate thin-film fired in an oxygen atmosphere.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.