Nonvolatile semiconductor memory device, semiconductor device and manufacturing method of nonvolatile semiconductor memory device
US7883967B2 · kind B2 · utility
4Cited by
10References
14Claims
0Family size
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Key dates
| Filing date | Jul 24, 2006 |
| Grant date | Feb 8, 2011 |
| Priority date | — |
| Expiry date | Jun 23, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/62
Abstract
A nonvolatile semiconductor memory device includes a gate portion formed by laminating a tunnel insulating film, floating gate electrode, inter-poly insulating film and control gate electrode on a semiconductor substrate, and source and drain regions formed on the substrate. The tunnel insulating film has a three-layered structure having a silicon nitride film sandwiched between silicon oxide films. The silicon nitride film is continuous in an in-plane direction and has 3-coordinate nitrogen bonds and at least one of second neighboring atoms of nitrogen is nitrogen.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.