Phase-change memory device and method of fabricating the same
US7884347B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 16, 2009 |
| Grant date | Feb 8, 2011 |
| Priority date | — |
| Expiry date | Apr 16, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8828
Abstract
A phase-change memory device in which a phase-change material layer has a multilayered structure with different compositions and a method of fabricating the same are provided. The phase-change memory device includes a first electrode layer formed on a substrate, a heater electrode layer formed on the first electrode layer, an insulating layer formed on the heater electrode layer and having a pore partially exposing the heater electrode layer, a phase-change material layer formed to fill the pore and partially contacting the heater electrode layer, and a second electrode layer formed on the phase-change material layer. The main operating region functioning as a memory operating region is formed of a Ge2Sb2+xTe5 phase-change material to ensure the stability of a memory operation, and simultaneously, the subsidiary regions formed of a Ge2Sb2Te5 phase-change material are disposed respectively on and under the Ge2Sb2+xTe5 main operating region to prevent leakage of thermal energy through an electrode, thereby reducing power consumption.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.