Thin-film device and method of fabricating the same
US7884360B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 6, 2007 |
| Grant date | Feb 8, 2011 |
| Priority date | — |
| Expiry date | Jun 26, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D99/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A thin-film device includes a first electrical insulator, an oxide-semiconductor film formed on the first electrical insulator, and a second electrical insulator formed on the oxide-semiconductor film, the oxide-semiconductor film defining an active layer. The oxide-semiconductor film is comprised of a first interface layer located at an interface with the first electrical insulating insulator, a second interface layer located at an interface with the second electrical insulator, and a bulk layer other than the first and second interface layers. A density of oxygen holes in at least one of the first and second interlayer layers is smaller than a density of oxygen holes in the bulk layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.