Patent · US Active

Optoelectronic semiconductor device and manufacturing method thereof

US7884376B2 · kind B2 · utility

9Cited by
5References
23Claims
0Family size

Assignee

Inventors

Key dates

Filing dateAug 26, 2008
Grant dateFeb 8, 2011
Priority date
Expiry dateSep 16, 2028

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10H20/8516

Abstract

An embodiment of the invention discloses an optoelectronic semiconductor device comprising a semiconductor system capable of performing a conversion between light energy and electrical energy; an interfacial layer formed on at least two surfaces of the semiconductor system; an electrical conductor; and an electrical connector electrically connecting the semiconductor system to the electric conductor.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.