Semiconductor light-emitting device
US7884386B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 28, 2010 |
| Grant date | Feb 8, 2011 |
| Priority date | — |
| Expiry date | Jan 28, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/0264
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor light-emitting device includes a semiconductor light-emitting element including a first multilayer reflector, an active layer having a light-emitting region, and a second multilayer reflector in the stated order; a semiconductor light-detecting element disposed opposite the first multilayer reflector in relation to the semiconductor light-emitting element and including a light-absorbing layer configured to absorb light emitted from the light-emitting region; a transparent substrate disposed between the semiconductor light-emitting element and the semiconductor light-detecting element; a first metal layer having a first opening in a region including a region opposite the light-emitting region and bonding the semiconductor light-emitting element and the substrate; and a second metal layer having a second opening in a region including a region opposite the light-emitting region and bonding the semiconductor light-detecting element and the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.