III-nitride devices and circuits
US7884394B2 · kind B2 · utility
62Cited by
2References
23Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 9, 2009 |
| Grant date | Feb 8, 2011 |
| Priority date | — |
| Expiry date | Aug 15, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A III-nitride based high electron mobility transistor is described that has a gate-connected grounded field plate. The gate-connected grounded field plate device can minimize the Miller capacitance effect. The transistor can be formed as a high voltage depletion mode transistor and can be used in combination with a low voltage enhancement-mode transistor to form an assembly that operates as a single high voltage enhancement mode transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.