Image sensor
US7884402B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Sep 29, 2008 |
| Grant date | Feb 8, 2011 |
| Priority date | — |
| Expiry date | Feb 28, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH04N25/771
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
Provided is an image sensor. According to embodiments, the subject image sensor can include a photodiode for converting incident light into electrical signals, a reset transistor for resetting a voltage value of a unit pixel, a drive transistor for providing an output voltage, a select transistor for selecting the unit pixel, a storage capacitor for storing electrons leaking from the photodiode, and a switching transistor for controlling the flow of charge to and from the storage capacitor. The switching transistor can be disposed connected to a node between the photodiode and the reset transistor, and the storage capacitor can be disposed at a side of the switching transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.