Semiconductor device and method for manufacturing the same
US7884428B2 · kind B2 · utility
1Cited by
1References
28Claims
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Key dates
| Filing date | Apr 3, 2008 |
| Grant date | Feb 8, 2011 |
| Priority date | — |
| Expiry date | Jan 30, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0223
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes an Nch transistor having a first gate electrode and a Pch transistor having a second gate electrode. The first gate electrode and the second gate electrode are made of materials causing stresses of different magnitudes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.