Patent · US Expired

Megavoltage imaging with a photoconductor based sensor

US7884438B2 · kind B2 · utility

2Cited by
10References
26Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJul 29, 2005
Grant dateFeb 8, 2011
Priority date—
Expiry dateApr 4, 2026

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG01T1/24
  • WIPO fieldEnvironmental technology
  • WIPO sectorChemistry

Abstract

A photodetector for detecting megavoltage (MV) radiation comprises a semiconductor conversion layer having a first surface and a second surface disposed opposite the first surface, a first electrode coupled to the first surface, a second electrode coupled to the second surface, and a low density substrate including a detector array coupled to the second electrode opposite the semiconductor conversion layer. The photodetector includes a sufficient thickness of a high density material to create a sufficient number of photoelectrons from incident MV radiation, so that the photoelectrons can be received by the conversion layer and converted to a sufficient of recharge carriers for detection by the detector array.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.