Information storage devices using magnetic domain wall movement and methods of operating the same
US7885104B2 · kind B2 · utility
1Cited by
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20Claims
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Key dates
| Filing date | Jun 10, 2008 |
| Grant date | Feb 8, 2011 |
| Priority date | — |
| Expiry date | Mar 26, 2029 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/5607
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
An information storage device includes a magnetic layer configured to store information, a first and second conductive layer. The first conductive layer contacts a first end of the magnetic layer. The second conductive layer contacts a second end of the magnetic layer. The magnetic layer includes first and second pinning regions at which magnetic domain walls are pinned. The widths of the magnetic layer at the first and second pinning regions are different.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.