Germanium-enriched silicon material for making solar cells
US7887633B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 16, 2008 |
| Grant date | Feb 15, 2011 |
| Priority date | — |
| Expiry date | Oct 26, 2028 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T117/1068
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Techniques for the formation of silicon ingots and crystals using silicon feedstock of various grades are described. Common feature is adding a predetermined amount of germanium to the melt and performing a crystallization to incorporate germanium into the silicon lattice of respective crystalline silicon materials. Such incorporated germanium results in improvements of respective silicon material characteristics, mainly increased material strength. This leads to positive effects at applying such materials in solar cell manufacturing and at making modules from those solar cells. A silicon material with a germanium concentration in the range (50-200) ppmw demonstrates an increased material strength, where best practical ranges depend on the material quality generated.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.