Silicon object forming method and apparatus
US7887677B2 · kind B2 · utility
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22Claims
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Key dates
| Filing date | Sep 21, 2006 |
| Grant date | Feb 15, 2011 |
| Priority date | — |
| Expiry date | Aug 27, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/34
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A silicon object formation target substrate is arranged in a first chamber, a silicon sputter target is arranged in a second chamber communicated with the first chamber, plasma for chemical sputtering is formed from a hydrogen gas in the second chamber, chemical sputtering is effected on the silicon sputter target with the plasma thus formed, producing particles contributing to formation of silicon object, whereby a silicon object is formed, on the substrate, from the particles moved from the second chamber to the first chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.