Patent · US Active

Method of manufacturing a photoelectronic device

US7888162B2 · kind B2 · utility

0Cited by
0References
11Claims
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Assignee

Inventors

Key dates

Filing dateJul 29, 2009
Grant dateFeb 15, 2011
Priority date
Expiry dateJul 29, 2029

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY02E10/50

Abstract

This application discloses a method of manufacturing a photoelectronic device comprising steps of providing a semiconductor stack layer, forming at least one metal adhesive on the semiconductor stack layer by a printing technology, forming an electrode by heating the metal adhesive to remove the solvent in the metal adhesive, wherein an ohmic contact is formed between the electrode and the semiconductor stack layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.