Patent · US Active

Method for manufacturing a semiconductor body with a trench and semiconductor body with a trench

US7888234B2 · kind B2 · utility

2Cited by

4References

15Claims

0Family size

Assignee

austriamicrosystems AG

Inventors

Martin Knaipp · Kufstein, AT
Bernhard Löffler · Gleisdorf, AT

Key dates

Filing date	Apr 17, 2008
Grant date	Feb 15, 2011
Priority date	—
Expiry date	Dec 20, 2028

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/76205
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method for manufacturing a semiconductor body with a trench comprises the steps of etching the trench (11) in the semiconductor body (10) and forming a silicon oxide layer (12) on at least one side wall (14) of the trench (11) and on the bottom (15) of the trench (11) by means of thermal oxidation. Furthermore, the silicon oxide layer (12) on the bottom (15) of the trench (11) is removed and the trench (11) is filled with polysilicon that forms a polysilicon body (13).

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.