Patent · US Active

Method of forming phase change memory devices in a pulsed DC deposition chamber

US7888240B2 · kind B2 · utility

52Cited by

2References

19Claims

0Family size

Assignee

STMicroelectronics SA

Inventors

Roger Hamamjy · San Jose, US
Kuo-Wei Chang · Waltham, US
Sean Lee · Santa Clara, US
Chong Wee Lim · Guadalupe, MX

Key dates

Filing date	Oct 10, 2007
Grant date	Feb 15, 2011
Priority date	—
Expiry date	Apr 25, 2029

Classification

Technology area (CPC H)Electricity
CPC primaryH10N70/8828
WIPO fieldSurface technology, coating
WIPO sectorChemistry

Abstract

A phase change memory including an ovonic threshold switch is formed using a pulsed direct current (DC) deposition chamber using pulsed DC. Pulsed DC is used to deposit a chalcogenide film. Pulsed DC may be also used to deposit a carbon film.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.