Semiconductor device and manufacturing method of semiconductor device
US7888262B2 · kind B2 · utility
1Cited by
2References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 13, 2007 |
| Grant date | Feb 15, 2011 |
| Priority date | — |
| Expiry date | Mar 10, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In one aspect of the present invention, A method for manufacturing a semiconductor device may include forming a first wiring in a first insulating layer on a base member, forming a second insulating layer on the first insulating layer, forming a first hole in the second insulating layer so as to reach the first wiring in the first insulating layer and a second hole in the second insulating layer so as to reach the first insulating layer, forming a via contact in the first hole, and forming a third insulating layer on the second insulating layer so as to shut the second hole.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.