Method of manufacturing silicon nano-structure
US7888271B2 · kind B2 · utility
2Cited by
4References
20Claims
0Family size
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Key dates
| Filing date | Nov 6, 2008 |
| Grant date | Feb 15, 2011 |
| Priority date | — |
| Expiry date | Nov 6, 2028 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/857
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for making silicon nano-structure, the method includes the following steps. Firstly, providing a growing substrate and a growing device, the growing device comprising a heating apparatus and a reacting room. Secondly, placing the growing substrate and a quantity of catalyst separately into the reacting room. Thirdly, introducing a silicon-containing gas and hydrogen gas into the reacting room. Lastly, heating the reacting room to a temperature of 500˜1100° C.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.