Silicon-based photovoltaic cell and its red light conversion layer
US7888591B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 20, 2008 |
| Grant date | Feb 15, 2011 |
| Priority date | — |
| Expiry date | Mar 10, 2029 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/547
Abstract
A silicon-based photovoltaic cell is disclosed having a red light conversion layer that absorbs ultraviolet rays, blue-purple or yellow-green light of the Sun's solar radiation and converts the absorption into a red, dark red and near infrared subband radiation. The maximum value of the solar radiation absorbed by the red light conversion layer is λ=470˜490 nm, and the maximum value of the photoluminescent spectrum of the red light conversion layer is within the photosensitive spectral zone of said single-crystal silicon substrate λ=700˜900 nm, i.e., in conformity with the optimal sensitivity area of silicon-based solar cells. The red light conversion layer has filled therein an ethyl acetoacetate or polycarbonate-based light-transmissive polymer that has evenly distributed therein a phosphor composed of α-Al2O3—Ti2O3, having a quantum efficiency of 90%.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.