Patent · US Active

Quantum dot light emitting device

US7888700B2 · kind B2 · utility

23Cited by
1References
19Claims
0Family size

Assignee

Inventor

Key dates

Filing dateMar 8, 2007
Grant dateFeb 15, 2011
Priority date
Expiry dateNov 7, 2027

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10S977/95

Abstract

An inorganic light emitting device including a transparent substrate; a first electrode; a second electrode opposed to the first electrode; a polycrystalline inorganic light emitting layer including core/shell quantum dots within an inorganic semiconductor matrix and, wherein the first electrode is transparent and formed on the transparent substrate, the polycrystalline inorganic light emitting layer is formed over the first electrode, and the second electrode is formed over the light emitting layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.