Pixel structure of solid-state image sensor
US7888716B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Jul 10, 2008 |
| Grant date | Feb 15, 2011 |
| Priority date | — |
| Expiry date | Aug 12, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH04N25/626
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
To eliminate uneven distribution of electrons caused by variation in threshold voltages of gates for distributing electrons and to have sensitivity in a long wavelength in a pixel structure of a solid-state image sensor of a charge sorting method, the structure has: a photodiode that generates electrons by photoelectric conversion; a plurality of charge-storage sections that store electrons generated in the photodiode; and a gate structure that is arranged between the photodiode and the charge-storage sections and controls transfer of electrons generated in the photodiode to the plurality of charge-storage sections, in which the gate structure is made up of plural stages of gates, and the plural stages of gates at least have: a front stage gate that is arranged adjacent to the photodiode and controls readout of electrons generated in the photodiode; and a rear stage gate that is arranged adjacent to the plurality of charge-storage sections on the rear stage of the front stage gate and performs control of distributing electrons read out by readout control of the front stage gate to the plurality of charge-storage sections.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.